PART |
Description |
Maker |
MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF3N06HD ON2184 ON2183 |
DUAL TMOS POWER MOSFET 60 VOLTS From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MMDF6N03HD MMDF6N03HD_D ON2199 ON2198 |
DUAL TMOS POWER MOSFET 30 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMDF1N05E MMDF1N05E_D ON2150 |
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
|
MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMDF2N06V |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1 |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA INC
|
ISL55110IRZ-T ISL55110-11 |
Dual, High Speed MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R 3.5 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp. Intersil Corporation
|